Three temperature zone PECVD system

Release time: 2024-06-18 01:22:57  Number of views: 70

The three temperature zone PECVD system, also known as the Plasma Enhanced Chemical Vapor Deposition (PECVD) system, is an advanced thin film deposition technology widely used in the semiconductor industry, microelectronics, optoelectronics, solar energy and other fields. The system converts the gas in the quartz vacuum chamber into an ionic state through an RF power supply, activates the reaction gas with high-energy electrons in the plasma, and causes it to undergo chemical reactions at lower temperatures, thereby depositing the required thin film on the substrate.

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Equipment Introduction:

The three temperature zone PECVD system, also known as the Plasma Enhanced Chemical Vapor Deposition (PECVD) system, is an advanced thin film deposition technology widely used in the semiconductor industry, microelectronics, optoelectronics, solar energy and other fields. The system converts the gas in the quartz vacuum chamber into an ionic state through an RF power supply, activates the reaction gas with high-energy electrons in the plasma, and causes it to undergo chemical reactions at lower temperatures, thereby depositing the required thin film on the substrate.
































Configuration details



Equipment features:
1. Accurate temperature control: The three temperature zone design enables the system to achieve more precise temperature control, meeting the temperature requirements of different materials and processes. By using three PID temperature controllers, the temperature of different areas can be controlled separately, ensuring that the entire deposition process is carried out within the ideal temperature range.
2. Fast sedimentation rate: Compared to traditional chemical vapor deposition (CVD) technology, PECVD system has a higher sedimentation rate. This is mainly due to the action of plasma, which allows the reaction gas to undergo chemical reactions at lower temperatures, thereby accelerating the deposition rate.
Good uniformity of the film layer: By controlling the frequency of the RF power supply, the stress magnitude of the deposited film can be accurately adjusted to ensure the uniformity and consistency of the film layer. This precise control is crucial for preparing high-quality and high-performance thin film materials.
3. High operational stability: The three temperature zone PECVD system adopts advanced vacuum systems and multi-channel proton mixing systems, ensuring the stability and reliability of the system. During long-term operation, the system can maintain a stable deposition rate and film quality, meeting the needs of large-scale production.
4. Widely applicable: This system can be widely used in the fields of growing nanowires, graphene, and thin film materials. For example, in the field of solar cells, PECVD technology is used to prepare high-quality silicon-based thin film solar cells; In the field of microelectronics, PECVD technology is used to prepare various thin film materials, such as SiO2, SiNx, etc.

Specification and model①

NBD-O1200-TS3-4ZD-PE

name①

CVDsystem

Power supply

380V 50HZ

Tmax

1200℃

Rated temperature

1150℃

Touch screen size

7"

Temperature zone size

200+200+200mm(Three temperature and three control)

Heating rated power

9KW

Sensor type

K-type thermocouple
Material and size of furnace tubes

Quartz tubeΦ80*1400mm

heating rate

1℃/H-20℃/Min

Mechanical pump pumping rate

6 cubic meters per hour KF25
Maximum vacuum degree of furnace chamber

3~5PaEquipped with digital vacuum gauge

Air intake system

Four way mass flow controller100sccm 200sccm 500sccm 500sccm

External dimensions of the furnace body

1488 long * 1275 high * 760mm deep

Specification and model②

RF-500W

name②

Plasma generator

RF frequency

13.56MHz

RF power output range

0-500WAdjustable

External dimensions

Length 275 * Height 380 * Depth 430mm
RF power

500W

control system

1. Sintering process curve setting: dynamically display the setting curve, the equipment sintering can pre store multiple process curves, and each process curve can be freely set;
2. Can schedule sintering and achieve unmanned sintering process curve sintering;
3. Real time display of sintering power and voltage information, recording sintering data, and export to achieve paperless recording;
4. Capable of remote control and real-time observation of equipment status;
5. Temperature correction: The difference between the main control temperature and the sample temperature is corrected nonlinearly throughout the sintering process

Temperature accuracy

±1℃

Pressure measurement and monitoring

Using a mechanical pressure gauge, the outer shell of the gauge is an airtight structure, which can effectively protect the internal components from environmental impact and debris intrusion, and has strong corrosion and high temperature resistance.

Gas supply system


The gas flow rate is controlled by a float flowmeter, integrated with the equipment, and leak testing has been carried out before leaving the factory.

Equipment details

Net weight

280kg

Equipment usage precautions

1. When the furnace temperature of the equipment is ≥ 300 ℃, it is prohibited to open the furnace to avoid injury;
2. When using the equipment, the pressure inside the furnace tube should not exceed 0.125MPa (absolute pressure) to prevent equipment damage caused by excessive pressure;
3. When used under vacuum, the operating temperature of the equipment shall not exceed 800 ℃.
4. The internal pressure of the gas supply steel cylinder is relatively high. When gas is introduced into the furnace tube, a pressure reducing valve must be installed on the cylinder. It is recommended to purchase a small pressure reducing valve for testing, with a range of 0.01MPa-0.15MPa, which will be more precise and safe to use.
5. When the temperature of the furnace body exceeds 1000 ℃, the furnace tube cannot be in a vacuum state, and the air pressure inside the furnace tube must be equivalent to atmospheric pressure and maintained at atmospheric pressure;
6. Long term use temperature of high-purity quartz tube ≤ 1100 ℃
7. It is not recommended to close the exhaust valve and intake valve at the flange end of the furnace tube during heating experiments. If it is necessary to close the gas valve to heat the sample, it is necessary to always pay attention to the reading on the pressure gauge. The absolute pressure gauge reading should not exceed 0.15MPa. The exhaust end valve must be immediately opened to prevent accidents (such as furnace tube rupture, flange flying out, etc.).

Service support

One year limited warranty with lifetime support (warranty does not include consumable parts such as handling pipes and O-rings. Please order replacement parts at the relevant product section below.)

Disclaimer: The product introduction content on this website (including product images, product descriptions, technical parameters, etc.) is for reference only. Due to untimely updates, there may be some discrepancies between the described content and the actual situation. Please contact our customer service personnel for confirmation. The information provided on this website does not constitute any offer or commitment, and Novartis may periodically improve and modify any information on the website without prior notice.
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Sale Service: 0371-6320 2801
                      0371-6320 2805
After-sales service: 0371-6320 2805
MR. CAI: 181-0371-5723
Email : nbd@nbdkj.com
Address:8# zhuyuan, Xinhua subdistrict, Xinzheng, Zhengzhou, China
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