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PECVD plasma chemical vapor deposition system

Release time:2017-11-15  Number of views:8160

Equipment introduction:

The product is composed of solid state plasma source, gas proton flow control system, substrate temperature control system, vacuum system, using centralized bus control technology of Nobardi operating software. It is suitable for SiO2 and SiNx film deposition at room temperature to 1200℃, and can realize TEOS source deposition, SiC film deposition and liquid gas source deposition of other materials. It is especially suitable for high efficiency protective film on organic materials and non-damaging passivation film deposition at specific temperature.







1. Cleaning and coating in one go, eliminate secondary pollution;

2. Upper open structure, easy to observe the sample;

3. The product adopts automatic control mode, touch screen, digital display;

4. High degree of equipment integration;

5. Stable radio frequency power supply, uniform temperature distribution, improve film quality.



Electrical Spec

AC220V    4KW



Heating rate

≤  20℃/min

RF power

300 or 500W   13.56MHz

Tube size


Deposition diagram


This is a diagram of the deposition process of the device

Control system


1.NBD-101EP embedded operating system Chinese and English interchange graphical interface, 7 inch real color touch screen input, intelligent man-machine dialogue mode, real-time heating power display, non-linear pattern temperature correction; The experimental report is generated independently, and the experimental data is exported for unlimited times.

2. The experiment process is more intuitive and the operation is more convenient;

3. It has the functions of overtemperature alarm, broken couple prompt, leakage protection and so on.

Temp Accuracy

+/- 1 ℃

Heating element


Mo-doped Fe-Cr-Al alloy

Sealing system




Vacuum degree: ≤10Pa (mechanical pump)

Pressure measurement and monitoring


The use of digital display vacuum gauge can make the vacuum degree of equipment more intuitive and the experimental results more accurate.

Gas supply system


Using two mass flowmeters to accurately control the gas flow rate, integrated with the equipment;

Net weight



1. When the furnace temperature of the equipment is greater than or equal to 300℃, it is forbidden to open the furnace to avoid injury;

2. When the equipment is in use, the pressure in the furnace tube shall not exceed 0.125MPa (absolute pressure) to prevent damage to the equipment caused by excessive pressure;

3. When used in vacuum, the operating temperature of the equipment shall not exceed 800℃.

4. The internal pressure of the gas supply cylinder is high, and when the gas is fed into the furnace tube, the pressure reducing valve must be installed on the cylinder. It is recommended to choose a small pressure reducing valve for test, and the measuring range of the valve is 0.01MPa-0.15MPa, which will be more accurate and safe in use.

5. When the temperature of the furnace body is higher than 1000℃, the furnace tube can not be in a vacuum state, the pressure in the furnace tube and atmospheric pressure, maintain in the state of atmospheric pressure;

6. Long-term use temperature of high purity quartz pipe ≦1100℃

7. During the heating experiment, it is not recommended to close the suction valve and intake valve at the flange end of the furnace tube. If it is necessary to close the air valve to heat the sample, it is necessary to always pay attention to the indicator of the pressure gauge. If the absolute pressure gauge reading is greater than 0.15MPa, the exhaust valve must be opened immediately to prevent accidents (such as furnace pipe rupture, flanges flying out, etc.).


1 year warranty with lifetime support (the warranty does not cover consumable parts, such as furnace tubes and sealing rings).


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