1、 Highly integrated and multifunctional
Cleaning coating integration: plasma cleaning and PECVD coating are completed in the same vacuum chamber, avoiding air pollution of the substrate during transfer and ensuring the cleanliness of the interface and excellent adhesion of the film.
Multi process compatibility: By switching gas and process parameters, multiple functions can be achieved:
Cleaning: O ₂ plasma to remove organic matter, Ar plasma physical sputtering to remove inorganic matter/activate surfaces.
Coating: Use SiH ₄+NH ∝/N ₂ O to deposit silicon nitride (Si ∝ N ₄), use SiH ₄+N ₂ O/O ₂ to deposit silicon dioxide (SiO ₂), etc.
2、 High precision process control
Accurate gas control:
Equipped with a multi-channel high-precision mass flow controller (MFC), it can accurately and stably adjust the flow rate of process gases such as O ₂, Ar, SiH ₄, NH ∝, N ₂ O (usually with an accuracy of ± 1% FS).
Advanced plasma control:
Using radio frequency (RF, 13.56 MHz) power supply, the RF power can be adjusted within a wide range to meet different process requirements (high power is required for cleaning, and optimized power is needed for film formation to control film stress).
Accurate temperature control:
Adopting PID temperature control, the temperature control accuracy can reach 15 ℃, ensuring the uniformity and repeatability of the film-forming reaction.
3、 Efficiency and Automation
Programmed automatic operation:
Equipped with PLC or computer control system, supporting the writing and storage of multi-step process programs (Recipes).
It can automatically complete the entire process of "vacuuming → cleaning (intake, ignition, timing) → exhaust → deposition (intake, boost, ignition, heating, timing) → exhaust → cooling → vacuum breaking", achieving unmanned operation.
High repeatability: Automated control ensures a high degree of consistency in process results between different batches and operators.
4、 Safety and reliability
Special safety design for silane:
Silane is a highly toxic, flammable, and explosive gas. The system must have:
Dedicated gas circuit: Use certified, leak proof pipelines and fittings.
Leak detection: Equipped with silane gas detectors to monitor environmental leaks in real-time.
5、 Structure and Maintenance
Modular design: Vacuum chambers, gas cabinets, power supplies, control cabinets, etc. often adopt modular design for easy maintenance, upgrading, and transportation.
Human machine interface friendly: equipped with a touch screen or computer software, the operation interface is intuitive, and real-time monitoring of process parameters, alarm information, and historical data can be achieved.
6、 Performance characteristics
High film quality: The deposited silicon nitride/silicon dioxide film has good uniformity, density, adhesion, and controllable stress (tensile stress/compressive stress).
Low temperature process: PECVD technology can deposit high-quality thin films at relatively low temperatures of 200-400 ℃, suitable for substrates that are not resistant to high temperatures.
Flexible production capacity: It can be designed as a single-chip, multi chip, or online system according to demand, suitable for research and development, pilot testing, or small-scale production.

Device Name

Silane plasma cleaning and coating system

Device Model

NBD-PECVD1200-100TID3ZYW-N

power supply

380V 50HZ three-phase five wire system frequency: 50Hz (PECVD: 230V (single-phase) exhaust gas treatment: 380V (three-phase)

rated power

8KW（PECVD4.5KW）

heating element

Alloy heating wire

Furnace temperature control accuracy

±1℃

sensor type

K-type thermocouple with a diameter of 2 * 420mm

Tmax

1200℃

Rated temperature

1150℃

Recommended heating rate

≤10℃/min

Furnace temperature zone size

φ150*295mm

Furnace tube size

Quartz tubeφ100*1200mm

Inductance coil (inductor coil)

internal diameter110mm

RF power

0—300WAdjustable (adjustable)

Mass flow meter1

S500 50SCCM 1/4VCRCalibration of connector nitrogen

Mass flow meter2

S500 100SCCM 1/4VCRCalibration of connector nitrogen

Mass flow meter3

S500 300SCCM 1/4VCRCalibration of connector nitrogen

Front stage pump

Pumping rate without oil pump WY-16 4.4L/s

Molecular pump, molecular pump

NBD-103A extraction rate 110L/s

Operating limit vacuum degree

7×10^-3Pa

Furnace body size

L1660*H2020*D900mm

Dimension of tail gas treatment unit

L2950*H2200*D820mm

control system

1. Sintering process curve setting: dynamically display the set curve, and the equipment sintering can pre store multiple process curves, each of which can be freely set;
2. Pre order sintering is available to achieve unmanned sintering process curve sintering;
3. Real time display of sintering power, voltage and other information, recording of sintering data, and the ability to export for paperless recording;
4. Capable of remote control and real-time observation of equipment status;
5. Temperature correction: The difference between the main control temperature and the sample temperature is nonlinearly corrected throughout the sintering process.

temperature accuracy

+/- 1 ℃

heating element

Mo doped Fe Cr Al alloy

 10Pa (mechanical pump)

Net weight

about280KG

Equipment usage precautions

1. When the furnace temperature of the equipment is ≥ 300 ℃, it is forbidden to open the furnace to avoid injury;
2. When using the equipment, the pressure inside the furnace tube should not exceed 0.125MPa (absolute pressure) to prevent equipment damage caused by excessive pressure;
3. When used under vacuum, the operating temperature of the equipment should not exceed 800 ℃.
4. The internal pressure of the gas supply cylinder is relatively high. When introducing gas into the furnace tube, a pressure reducing valve must be installed on the cylinder. It is recommended to purchase a small pressure reducing valve for testing, with a range of 0.01MPa-0.15MPa, which will be more precise and safe to use.
5. When the temperature of the furnace body is higher than 1000 ℃, the furnace tube cannot be in a vacuum state. The pressure inside the furnace tube should be equivalent to atmospheric pressure and maintained at atmospheric pressure;
6. Long term use temperature of high-purity quartz tube ≤ 1100 ℃
7. It is not recommended to close the exhaust and intake valves at the flange end of the furnace tube during heating experiments. If it is necessary to close the gas valve to heat the sample, it is necessary to constantly monitor the reading on the pressure gauge. The absolute pressure gauge reading should not exceed 0.15 MPa, and the exhaust valve must be opened immediately to prevent accidents (such as furnace tube rupture, flange flying out, etc.).

Service Support

One year limited warranty, providing lifetime support (the warranty does not include consumable parts such as processing tubes and O-rings, please order replacement parts at the relevant product below)