Add Time: 2024-06-28 View:913
Equipment introduction: Chemical vapor deposition (CVD) refers to the method of chemical gas or steam reacting to synthesize coating or nano material on the substrate surface. It is a very widely used technology for deposition of thin film materials in the semiconductor industry, including a wide range of insulation materials, and most metal materials and metal alloy materials. For this purpose, we have developed a complete set of CVD coating system, which is applicable to material laboratories,...
| Equipment characteristics: 1. High-purity alumina furnace tube is adopted, with excellent corrosion resistance and high temperature resistance; 2. High-purity Al2O3 fiber refractory insulation material, with outstanding insulation effect, effectively reducing the power consumption of equipment; 3. Double-layer air cooling structure process is adopted for the furnace body, which is helpful to quickly reduce the shell surface temperature; 4. Intelligent PID fuzzy temperature control, centralized control with 7-inch touch screen, visual display of "time-temperature" curve; | ||||
Equipment name | High temperature CVD system | ||||
T-max | 1500℃ | ||||
source | Single-phase 220V 50HZ | ||||
Rated power | 6KW | ||||
Type of temperature measuring element | S thermocoupleφ8*205mm | ||||
Tmax | 1450℃ | ||||
Size of heating temperature zone | First temperature zone:Φ 100*225mm Second temperature zone: Φ100*225mm | ||||
Furnace tube size | Φ100*1200mm | ||||
Overall dimensions | L 1414mm * H 720mm * D 514mm | ||||
Rate of heating | 1℃/H-20℃/Min | ||||
weight | 350kg | ||||
control system |
| 1. Sintering process curve setting: the setting curve is displayed dynamically, multiple process curves can be pre-stored for equipment sintering, and each process curve can be set freely; 2. Sintering can be reserved to realize unattended sintering process curve sintering; 3. Display sintering power voltage and other information in real time, record sintering data and export paperless records; 4. Remote control and real-time observation of equipment status; 5. Temperature correction: the difference between the main control temperature and the sample temperature, and nonlinear correction shall be carried out throughout the sintering process. | |||
Temperature accuracy | ±1℃ | ||||
Heating element, heating element |
| High-purity silicon carbon rod with excellent acid and corrosion resistance | |||
Sealing system | |
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Vacuum degree: 10Pa (mechanical pump) | |||||
Air supply system |
| Float flow meter is used to control the gas flow rate, which is integrated with the equipment and has been tested for air leakage before leaving the factory. | |||
| Pressure measurement and monitoring |
| The mechanical pressure gauge is adopted. The gauge housing is of air-tight structure, which can effectively protect the internal parts from environmental impact and foreign matter intrusion. Meanwhile, it has strong corrosion resistance and high temperature resistance. | |||
Weak corrosive gas preheater Optional | | The whole body is made of 316L material. Pre-heat the various gases and corrosive gases to meet the special process requirements, with the maximum temperature of 600 ℃. | |||
Net weight | 350kg | ||||
Precautions for equipment use | 1. When the equipment hearth temperature is ≥ 300 ℃, do not open the hearth to avoid injury; 2. Slight cracks caused by continuous use of the furnace are normal and do not affect the normal use of the equipment; | ||||
Service support | One year limited warranty with lifetime support (Consumable parts, such as processing tubes and O-rings, are not covered by this warranty. Please order replacement parts from the relevant products below.) | ||||
The CVD (Chemical Vapor Deposition) system is an advanced material fabrication technology that deposits solid thin films onto substrates through vapor-phase chemical reactions. With its advantages of uniform film formation, high purity, strong adhesion, low-temperature deposition capability, and controllable composition/structure, the CVD system has been widely applied in various high-tech fields. Below are its primary application areas:
1. Semiconductor and Microelectronics Industry (Core Applications)
Integrated circuit (IC)
Deposition of SiO₂ (insulation layer), Si₃N₄ (passivation/mask layer), polysilicon (gate), W/Cu (metal interconnect);
advanced packaging
Preparation of low-k dielectric materials and barrier layers (such as Ta/TaN);
Power devices and RF devices
Growth of SiC and GaN epitaxial layers for high-voltage, high-frequency, and high-temperature devices.
Key requirements: high purity, nanoscale thickness control, large-area uniformity, and cleanroom compatibility.
II. Photovoltaics and New Energy
Crystalline silicon solar cells
Deposition of SiNx anti-reflection/passivation film (mainstream PECVD process);
Thin-film solar cells
Preparation of amorphous silicon (a-Si), microcrystalline silicon (μc-Si), and CIGS absorption layers;
Perovskite solar cells
Deposition of hole transport layers (such as Spiro-OMeTAD alternatives), encapsulation barrier layers (Al₂O₃, SiO₂);
Fuel cell/ electrolyzer
Preparation of catalytic electrode coatings (e.g., Pt/C, IrO₂).
III. Two-Dimensional Materials and Nanotechnology (Frontier Research Trends)
graphene
Large-area monolayer/few-layer graphene was grown on Cu/Ni foils via CH₄/H₂ CVD;
Transition metal dichalcogenides (TMDs)
Such as MoS₂, WS₂, WSe₂, used in flexible electronics and optoelectronic devices;
Hexagonal boron nitride (h-BN)
As an ideal insulating substrate or encapsulation layer for two-dimensional devices;
Carbon nanotubes (CNTs)
Catalytic CVD enables controlled growth of vertical arrays or horizontal networks.
Characteristics: Precise control of precursor ratios, temperature gradients, and growth time is required to regulate the number of layers, grain domain size, and defect density.
5. Hard Coatings and Tool Enhancement (Industrial Applications)
Surface strengthening of cutting tools/molds
Deposition of TiN, TiCN, Al₂O₃, and DLC (diamond-like carbon) coatings to enhance wear resistance and lifespan;
Aerospace components
Preparation of interfacial coatings for SiC/SiC ceramic matrix composites;
Artificial joints/medical devices
Deposited biocompatible DLC or SiOₓ coatings.
VI. Energy Storage and Catalysis
Lithium/sodium-ion batteries
Coating the electrode surface with atomic layers such as Al₂O₃ and TiO₂ (ALD is often combined with CVD) to suppress side reactions;
Prepare three-dimensional current collectors (such as CVD carbon foam);
electrocatalyst
Growth of single-atom catalysts (such as Fe-N-C) supported on carbon nanotube/graphene composites;
hydrogen storage materials
Constructing a nanoporous carbon skeleton for physical adsorption hydrogen storage.
7. Emerging Interdisciplinary Fields
Field Application Example
Flexible Electronics: CVD Graphene for Transparent Electrodes and Strain Sensors
Quantum Computing
Epitaxial Growth of High-Purity Si/SiGe Heterostructures for Quantum Dot Devices
Functionalized CVD Diamond Films for Biosensing Applications in Neural Electrodes and DNA Detection
Environmental Protection: TiO₂ Photocatalytic Membranes for Water and Air Purification