Add Time： 2025-03-12 View：603
The Bridgman crystal growth furnace is an equipment used for preparing high-quality single crystal materials, particularly suitable for growing single crystals of materials such as semiconductors, metals, and ceramics. This furnace achieves crystal growth by controlling the temperature gradient and material cooling rate. This device combines the technologies of "vertical crucible descent, furnace movement" and "rotating pulling", which is a relatively advanced configuration t...
| Equipment features: | |
Equipment name | Bridgeman single crystal growth furnace | |
Equipment model | LO1700-100T2F | |
power supply | AC380V 50Hz | |
maximum power | 9.5KW | |
Tmax | 1650℃（<1小时） | |
Continuous operating temperature | 1600℃ | |
heating element | Silicon molybdenum rod | |
Furnace tube flange | 99 corundum tube size Φ 100 * 1300mm (operating temperature ＜ 1700 ℃) | |
sample stage | Φ 80mm graphite sample stage | |
Crucible loading | Automatic sample table lifting for easy placement/sampling of crucibles | |
| 1. Sintering process curve setting: dynamically display the set curve, and the equipment sintering can pre store multiple process curves, each of which can be freely set; 2. Pre order sintering is available to achieve unmanned sintering process curve sintering; 3. Real time display of sintering power, voltage and other information, recording of sintering data, and the ability to export for paperless recording; 4. Capable of remote control and real-time observation of equipment status; 5. Temperature correction: The difference between the main control temperature and the sample temperature is nonlinearly corrected throughout the sintering process. | |
Appointment sintering |  | Optimize equipment utilization, ensure sintering process stability, save waiting time, and achieve efficient and orderly sample preparation. |
Nonlinear temperature correction |  | By using algorithms to nonlinearly correct the temperature deviation between the control point and the sample due to their different positions in the temperature field, the consistency between the control temperature and the sample temperature is improved, the operation is simplified, and the accuracy of experimental data is enhanced. |
remote control |  | You can log in to the control system anytime and anywhere through computers, mobile phones, and other terminals to view the operating status of the heating furnace (temperature, pressure, heating rate, etc.), and remotely adjust parameters and start/pause programs according to experimental needs. No need to travel back and forth to the laboratory at night or on holidays to meet the parameter tuning needs during the experimental process; Real time monitoring of key experimental processes can also be achieved during cross regional business trips, significantly reducing ineffective commuting time and allowing researchers to allocate work energy more efficiently. |
data storage |  | Ensure data security, integrity, standardized management, and efficient retrieval |
Multiple sets of exclusive process programs can be pre-set |  | Multiple types of experiment specific temperature programs can be preset to ensure experimental repeatability and ease of operation, support process optimization and data tracing, adapt to team collaboration and technical inheritance, greatly improving experimental efficiency and design flexibility. |
heating zone | Dual temperature zone, with a length of 100+100mm | |
temperature control system | Adopting PID method for temperature control, adjustable temperature rise and fall programs can be set | |
precision | ±1℃ | |
thermocouple | B-type thermocouple | |
Furnace body movement stroke and speed | The maximum movement stroke of the furnace body is 300mm | |
The core of the Bridgman crystal growth furnace (including vertical/horizontal, atmospheric/high-pressure variants) achieves high-quality single crystal growth through directional solidification+slow movement/cooling, suitable for volatile, high melting point, and component sensitive compounds and functional crystals. It is a key preparation equipment in the fields of semiconductors, optoelectronics, nuclear detection, infrared, photovoltaics, etc.
| III-V semiconductor | GaAs、InP、GaN、InSb | RF/microwave devices, optoelectronic devices, high electron mobility transistors (HEMTs) |
| Ⅱ-Ⅵ Group compounds | CdTe、CdZnTe（CZT）、HgCdTe、ZnSe、ZnS | Infrared detector, nuclear radiation detector, infrared window/lens |
| Fluoride/alkali metal crystals | CaF₂、MgF₂、LiF、NaCl | Optical window, prism, spectral element, laser gain medium |
| Ferroelectric/Piezoelectric Functional Crystals | LiNbO₃、LiTaO₃、KDP/KDP 类 | Optical modulators, surface acoustic wave (SAW) devices, nonlinear optics |
| photovoltaic materials | CdTe、GaAs、InP | photovoltaic materials |
| photovoltaic materials | High temperature superconducting single crystal, rare earth permanent magnet single crystal | Research on Superconducting Mechanism, High Performance Magnets and Devices |
| Nuclear Detection and Imaging | CZT、HgI₂、TlBr | Medical imaging, security inspection, nuclear radiation detection, and energy spectrum measurement |
| Research and New Materials | New functional single crystals and high entropy alloy single crystals | Physical property exploration, small-scale/pilot scale testing, customized single crystal preparation |
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