Large caliber (12 inch) uniform temperature diffusion furnac-Box furnace, tube furnace, ultra-high temperature sintering furnace

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Large caliber (12 inch) uniform temperature diffusion furnac

Add Time： 2025-10-23 View：221

The isothermal diffusion furnace is a high-precision and highly uniform horizontal tube type high-temperature furnace designed specifically for fields such as semiconductors, photovoltaics, and microelectronics. Its core goal is to provide an extremely uniform temperature and precise controllable atmosphere for heat treatment of silicon wafers, wafers or other substrates, in order to achieve high-quality key processes such as diffusion doping, oxidation, annealing, sintering, etc. The 'avera...

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	Core features of the equipment Heating system: Multi zone independent temperature control: The furnace body is divided into 6-12 independent heating zones along the axis, and each zone is precisely adjusted by an independent PID controller. -High stability heating element: using high-quality resistance wire or silicon carbide rod, slow aging, stable power output. Temperature measurement and control High precision thermocouple: directly monitors the temperature in each temperature zone with an accuracy of ± 0.1 ℃. -Advanced temperature field algorithm: Predicting and compensating for edge effects and load changes through software models, dynamically optimizing power allocation in each area. Airflow and process chamber -Optimized aerodynamic design: The quartz furnace tube is equipped with baffles, spray heads, or special structures to ensure that process gases (O ₂, N ₂, H ₂, etc.) pass uniformly and laminar through each wafer. -High flow flushing: Quickly replace gas, reduce cross contamination, and ensure process repeatability. Quartz system -High purity synthetic quartz: resistant to high temperatures, low precipitation, and avoids metal contamination. -Precision boat/bracket: Ensure consistent wafer spacing and reduce obstruction effects.
Device Name	Large caliber vacuum diffusion furnace
Specification Model	NBD-T1200-400T5D4ZY-435
power supply	AC380V 50HZ
rated power	65KW
Number of temperature zones	Single temperature five control
temperature control accuracy	±1℃
sensor type	K-type thermocouple with a diameter of 1 * 250mm
Tmax	1200℃
Long term working temperature	1100℃
Recommended heating rate	≤20℃/min
Size of furnace temperature zone	Φ460*1625mm
Furnace tube specifications	quartz tubeφ40024005mm
Mass flow controller	S500 2000SCCM with a diameter of 6.35 and a 2-meter double card sleeve. Fluorine rubber sealed nitrogen calibration for the short wire S500 10SLM with a diameter of 6.35 and double card sleeves, 2-meter short wire, fluorine rubber seal, nitrogen calibration
Constant voltage control range	100-90000Pa
Air inlet and outlet interface	Air inlet: Double card sleeve with a diameter of 6.35 Air outlet: 12mm diameter pagoda mouth Safety valve outlet: φ 8mm pagoda outlet Draw the real blank: KF40
vacuum pump	DRV60 KF40 three-phase
Furnace body size	Length 3080 (right bracket fully open, length 3750) * Height 1838 * Depth 880mm
Heating chamber		Insulation materials: crystal fibers, etc Insulator: high-purity corundum, spacing adjusted according to temperature field Port transition ring: vacuum formed alumina fiber. Temperature zones: 3, 4, 5, 6
control system		1. Sintering process curve setting: dynamically display the set curve, and the equipment sintering can pre store multiple process curves, each of which can be freely set; 2. Pre order sintering is available to achieve unmanned sintering process curve sintering; 3. Real time display of sintering power, voltage and other information, recording of sintering data, and the ability to export for paperless recording; 4. Capable of remote control and real-time observation of equipment status; 5. Temperature correction: The difference between the main control temperature and the sample temperature is nonlinearly corrected throughout the sintering process.
Appointment sintering		Optimize equipment utilization, ensure sintering process stability, save waiting time, and achieve efficient and orderly sample preparation.
Nonlinear temperature correction		By using algorithms to nonlinearly correct the temperature deviation between the control point and the sample due to their different positions in the temperature field, the consistency between the control temperature and the sample temperature is improved, the operation is simplified, and the accuracy of experimental data is enhanced.
remote control		You can log in to the control system anytime and anywhere through computers, mobile phones, and other terminals to view the operating status of the heating furnace (temperature, pressure, heating rate, etc.), and remotely adjust parameters and start/pause programs according to experimental needs. No need to travel back and forth to the laboratory at night or on holidays to meet the parameter tuning needs during the experimental process; Real time monitoring of key experimental processes can also be achieved during cross regional business trips, significantly reducing ineffective commuting time and allowing researchers to allocate work energy more efficiently.
data storage		Ensure data security, integrity, standardized management, and efficient retrieval
Multiple sets of exclusive process programs can be pre-set		Multiple types of experiment specific temperature programs can be preset to ensure experimental repeatability and ease of operation, support process optimization and data tracing, adapt to team collaboration and technical inheritance, greatly improving experimental efficiency and design flexibility.
heating element		Using high-quality heating wires: KANTHAL and HRE
Vacuum sealing system		Vacuum degree: ≤ 10Pa (mechanical pump)
gas supply system		Using a mass flow meter to control gas flow rate, integrated with the equipment;
temperature accuracy	±1℃
Net weight	About 800KG
Equipment usage precautions	11. Asbestos gloves must be worn when collecting samples, and quartz devices should be carefully broken when using them; 2. Choose a suitable quartz boat, take out the cleaned quartz pallet and quartz hook; 3. Insert the sample into the groove of the quartz boat and use a quartz hook to push the quartz boat into the furnace tube to the constant temperature zone; 4. The pressure inside the furnace tube shall not exceed 0.15 MPa (absolute pressure) to prevent danger caused by excessive pressure; 5. When used under high vacuum, the operating temperature of the equipment should not exceed 1000 ℃;
Service Support	一Annual limited warranty, providing lifetime support (warranty scope does not include consumable parts such as processing tubes and O-rings, please order replacement parts at the relevant product below).

1、 Semiconductor chip manufacturing (core applications)

Integrated Circuit (IC): gate oxidation, well/source/drain diffusion, doping activation, high-temperature annealing of logic/storage chips; The temperature control accuracy reaches 0.1 ℃ level, ensuring chip yield.

Power devices: IGBT, MOSFET, SiC devices with deep junction diffusion, high-temperature push well, Ohmic contact alloying to enhance conductivity and reliability.

Discrete devices: P-N junction formation, base/emitter diffusion, and annealing of diodes, transistors, and thyristors.

MEMS and Optoelectronics: MEMS sacrificial layer oxidation and doping form conductive pathways; Doping and high-temperature annealing of photodetectors and lasers.

Process key points: Suitable for batch processing of 8-12 inch large wafers, significantly increasing the loading capacity of a single furnace; Multi zone temperature control ensures temperature uniformity within the large diameter.

2、 Photovoltaic cell manufacturing

Crystalline silicon solar cells: Large aperture closed tube/low-voltage diffusion furnace is used for P/B doping and oxidation annealing of silicon wafers to improve conversion efficiency; A single batch can process hundreds of 156 square pieces or 8-inch circular pieces, with a significant increase in production capacity.

Process advantages: Low pressure mode improves diffusion depth and uniformity, reduces impurity source consumption and pollution.

3、 Electronic components and new materials

Semiconductor discrete devices: diffusion and annealing of high-frequency devices and power modules to optimize conductivity and thermal stability.

Optoelectronics and compound semiconductors: Preparation of epitaxial layers such as GaAs and InP, doping and annealing of laser and infrared devices.

Advanced packaging: metalization annealing of chips and substrates, sintering of interconnect layers to enhance interconnect reliability.

4、 Research and Special Materials

Material characterization and preparation: Research on high-temperature diffusion, annealing, and doping of semiconductor materials and wide bandgap semiconductors such as GaN and SiC.

Functional ceramics and thin films: doping sintering of piezoelectric and ferroelectric ceramics; CVD and annealing of semiconductor thin films.

Laboratory application: Large diameter furnace tubes are suitable for processing large-sized samples or batch samples, meeting precise temperature control and atmosphere requirements.

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