Professor Pan of Shanghai University led the team members to visit our company and was personally received by Professor Xu Xiaodong, founder of our company. Mr. Pan had a detailed understanding of the specific parameters of PECVD equipment of our company, and fully affirmed the excellent performance of the equipment in the demonstration process. PECVD Introduction: The product is composed of solid state plasma source, gas proton flow control system, substrate temperature control system, vacuum system, using centralized bus control technology of Norbadi operating software. It is suitable for the deposition of SiO2 and SiNx films under the condition of room temperature to 1200℃, and can realize the deposition of TEOS source, SiC film layer and liquid gas source and other materials, especially suitable for the deposition of high-efficiency protective film on organic materials and non-damage passivation film under specific temperature.